Advanced design activities are focusing around the field of specific on-resistance as the major benchmark parameter for just a specified technology. Our All round target is to combine the small RDS(on) supplied by silicon carbide MOSFETs with an gate drive mode in which the device operates in the safe oxide https://www.facebook.com/permalink.php?story_fbid=pfbid0q9ndf1BJBDTdkYp47dhgkVwzjCa9uvUfrph1G5iY6jDFJ3CFiubTvYb2BugmQWHnl&id=61562415773754&__cft__[0]=AZUXObaQYt-gIoMxrW_KprnWU9S9uDqrPLJ9OYNPUyTxEgdQhL5RNZwEptVpMksEZCfj3B4zmy4dAGn59S2XXsODDpfvcpIzI0HLcqXXgN-2-lkH84CiudiaZ4UeKaXhFh6T1Yr8X50femqGbt_mSIJRaubt4AnKKX__f18GQwqXKPvNpSL_qZ-80EcFQ6gLjWH7-TAXqBj801AcshJePcsO&__tn__=%2CO%2CP-R